Chemical Vapor Deposition System (CVD)

Chemical vapor deposition system (CVD) ,three-temperature zone CVD system, the diameter of the growth sample chamber is 60-120mm, which is composed of a high-temperature tube furnace, a multi-channel high-precision flow control and gas supply system, a mechanical pump, and a vacuum It is composed of sealing and measurement system and exhaust gas treatment system, and the ultimate vacuum degree can reach 10^-5 torr.

Main feature

1. The advantage lies in the preparation of thin film materials, low-dimensional nanomaterials, etc. (especially suitable for the growth and in-situ doping of transition metal two-dimensional semiconductor materials, as well as the growth of multi-dimensional two-dimensional materials)

2. An optional remote plasma radio frequency generation system can be used for plasma-assisted growth, etching processing and material surface modification of thin film materials, low-dimensional nanomaterials, etc. (especially suitable for the non-invasive treatment of two-dimensional materials such as graphene and boron nitride. Catalytic growth, defect control, and residual glue removal in the device manufacturing process)

3. The growth process design is advanced and can satisfy the non-catalytic growth of the substrate.

4. Application cases (click to jump)

Main technical parameters of equipment
Temperature control parameters   unit
temperature 1200
power 6.5 kw
Temperature control accuracy ±1
Vacuum system    
Vacuum pump 1 x 10 -3 (7.5 x 10 -4 ) mbar (Torr)
Vacuum pump (open gas ballast) 1.5 x 10 -2 (1.1 x 10 -2 ) mbar (Torr)
Vacuum pump (use PEPE oil) 1 x 10 -2 (7.5 x 10 -3 ) mbar (Torr)
Vacuum degree inside the cavity Better than 2.0 * 10 -2 Torr
Flow control parameters    
Leakage rate 4×10 -9 atm-cc/secHe
resolution 0.1% of full scale  
Response time gas characteristics  < 2 s
Response time electrical 500 ms
Exhaust gas absorption parameters    
Material Shell aluminum alloy, stainless steel PTFE  
suction chamber PTFE  
Plasma system parameters    
Power output 5 – 300, 5 – 500 W
Signal frequency 13.56 ±0.005% MHz
Reflected power 200 W
Power stability ±0.1%  
harmonic components ≤-50 dbc
Supply voltage Frequency 50/60HZ
Application cases
We will share with you a case of chemical vapor deposition system
Catalytic-free growth of Graphene on any substrate
Catalytic-free epitaxial growth of Graphene
Epitaxial Graphene/BN heterojunction and Moiré superlattice
EDefect repair of graphene oxide
Development of Graphene’s Anisotropic Etching Technology
Controlled growth and grain size adjustment of MoS2
Oriented epitaxial growth of two/four-inch continuous monolayer MoS2

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